N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15453 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

丝印：24N60M2；Package：PowerFLAT；N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

文件：1.27622 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60M2；Package：TO-220FPwidecreepage；N-channel 600 V, 0.168 ??typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP wide creepage package

文件：747.85 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：24N60M2；Package：TO-220FP；N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

文件：692.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体