| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
24N60PN | 24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | |
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.14 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：357.52 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN | ||
丝印：24N60PN；Package：TO-3P；24A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power densit 文件：349.13 Kbytes 页数：9 Pages | SILAN 士兰微 | SILAN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUHNER |
新 |
1 |
全新原装 货期两周 |
询价 | |||
ST/意法 |
23+ |
TO-220 |
20000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
询价 | ||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
询价 | ||
ST |
24+ |
TO-220 |
200000 |
原装进口正口,支持样品 |
询价 | ||
ST |
24+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
UTC/友顺 |
2022+ |
TO-3P |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
UTC(友顺) |
2447 |
TO-247 |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 |
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