N沟道600 V、0.168 Ohm典型值、18 A MDmesh M2功率MOSFET，TO-220FP超窄引线封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Lower RDS(on) x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

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丝印：24N60M2；Package：TO-220FP；N-channel 600 V, 0.168 廓 typ., 18 A MDmesh??M2 Power MOSFET in a TO-220FP ultra narrow leads package

文件：692.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

文件：1.5738 Mbytes 页数：22 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.19Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.82 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co

文件：1.27622 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体