STL7NM60N

Low input capacitance and gate charge, Low gate input resistance

STL7NM60N

MOSFET N-CH 600V 5.8A POWERFLAT;

STP7NM60N

N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET

Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l

STP7NM60N

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

STU7NM60N

iscN-ChannelMOSFETTransistor