| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STL7NM60N | Low input capacitance and gate charge, Low gate input resistance | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
7A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC7NM60isahighvoltagesuperjunctionMOSFETandis designedtohavebettercharacteristics. TheUTC7NM60Utilizinganadvancedcharge-balance technology,enhancesystemefficiency,improveEMIandreliability. suchaslowgatecharge,lowon-stateresistanceandhavea | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=900mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-channel600V,5A,0.84ohm,DPAK,TO-220FP,TO-220,IPAKsecondgenerationMDmeshPowerMOSFET Description ThesedevicesareN-channelPowerMOSFETsrealizedusingthesecondgenerationofMDmeshTMtechnology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproductoffersimprovedon-resistance,l | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | |
详细参数
- 型号：
STL7NM60N
- 功能描述：
MOSFET N-Ch 600V 5.8A 0.805 Second Gen MDmesh
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1436+ |
QFN |
30000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
ST |
1726+ |
POWERFLAT5X5 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
ST |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
36000 |
正品授权货源可靠 |
询价 | |||
ST |
2020+ |
QFN |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST(意法) |
2002 |
QFN |
65000 |
原装正品假一罚万 |
询价 | ||
STMicroelectronics |
21+ |
14-PowerFLAT?(5x5) |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
STM原厂目录 |
23+ |
PowerFLAT5x5 |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST |
20+ |
QFN |
25000 |
全新原装现货,假一赔十 |
询价 |
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