isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 900mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

文件：320.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, l

文件：885.94 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：333.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, l

文件：885.94 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体