isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 30 V, 0.0037 廓 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET

文件：936.51 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：963.68 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. R\nDS(on) * Q\ng industry benchmark\nHigh avalanche ruggedness\nExtremely low on-resistance R\nDS(on)\nLow gate drive power losses;

ST

意法半导体