isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V (Min) ·Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：373.1 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z Datasheet W9NK90Z datasheet : Search -----> STW9NK90Z The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it a

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STMICROELECTRONICS

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N-channel 900 V, 1.1 廓, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH??Power MOSFET

文件：997.89 Kbytes 页数：17 Pages

STMICROELECTRONICS

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N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

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STMICROELECTRONICS

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N沟道900V - 1.1 Ohm - 8A - TO-220有齐纳管保护的SUPERMESH MOSFET

The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ wellestablished strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full r • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested;

ST

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