isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.95Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：320.25 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P9NK60ZFP；Package：TO-220FP；N-CHANNEL 600V - 0.85ohm - 7A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：581.75 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10937 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N沟道600 V、0.85 Ohm典型值、7 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220FP封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Improved ESD capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances;

ST

意法半导体