N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.45 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：664.45 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 700V - 1Ohm - 7.5A - TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET

• VERY GOOD MANUFACTURING REPEATIBILITY\n• VERY LOW INTRINSIC CAPACITANCES\n• TYPICAL RDS(on) = 1.0 \n• IMPROVED ESD CAPABILITY• EXTREMELY HIGH dv/dt CAPABILITY\n• GATE CHARGE MINIMIZED\n• 100% AVALANCHE RATED;

ST

意法半导体

N沟道700V - 1Ohm - 7.5A - TO-220FP有齐纳管保护的SuperMesh(TM) 功率MOSFET

The SuperMESHtm series is obtained through an extreme optimization of STs well established stripbased PowerMESHtm layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • VERY GOOD MANUFACTURING REPEATIBILITY \n• VERY LOW INTRINSIC CAPACITANCES \n• TYPICAL RDS(on) = 1.0\n• IMPROVED ESD CAPABILITY \n• EXTREMELY HIGH dv/dt CAPABILITY \n• GATE CHARGE MINIMIZED \n• 100% AVALANCHE RATED;

ST

意法半导体