isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -80A@ TC=25℃ ·Drain Source Voltage : VDSS= -55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET??II POWER MOSFET

Description These Power MOSFETs are the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarka

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STMICROELECTRONICS

意法半导体

P-channel 55V - 0.016廓 - 80A - TO-220 - D2PAK STripFET??II Power MOSFET

Description This Power MOSFET is the laest development of STMicroelectronics unique “Single feature size™”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

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STMICROELECTRONICS

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P-channel 55 V, 0.016 廓, 80 A TO-220, D2PAK STripFETTM II Power MOSFET

文件：348.74 Kbytes 页数：16 Pages

STMICROELECTRONICS

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P-channel 55 V, 0.016 Ohm typ, 80 A STripFET(TM) II Power MOSFET in TO-220 package

These Power MOSFETs are the latest development of STMicroelectronics unique \"single feature size\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufac Extremely dv/dt capability\n100% avalanche tested\nApplication oriented characterization;

ST

意法半导体