N沟道600 V、1.5 Ohm、2.2 A MDmesh(TM) II功率MOSFET，PowerFLAT(TM) 3.3 x 3.3 HV封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

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Low input capacitance and gate charge

文件：865.97 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Power MOSFET

文件：1.07623 Mbytes 页数：9 Pages

VBSEMI

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N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：723.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件：711.43 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体