Very low gate charge

Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance RDS(on) • Very low gate charge • High avalanche ruggednes

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STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0011 Ohm typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司

DFN5X6

STM

信盛精工

上传：深圳市远进半导体有限公司