丝印：42P4LLF6；Package：PowerFLAT；P-channel 40 V, 0.0155 廓 typ.,42 A, STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

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STMICROELECTRONICS

意法半导体

P沟道40 V、0.0155 Ohm典型值、42 A STripFET F6功率MOSFET，PowerFLAT 5x6封装

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司

DFN5X6

STM

信盛精工

上传：深圳市远进半导体有限公司