STL45N65M5

丝印：45N65M5；Package：PowerFLAT；N-channel 650 V, 0.075 廓 typ., 22.5 A MDmesh??M5 Power MOSFET in a PowerFLAT??8x8 HV package

Description ThisdeviceisanN-channelPowerMOSFET basedontheMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhig

STL45N65M5

N沟道650 V、0.075 Ohm典型值、22.5 A MDmesh M5功率MOSFET，PowerFLAT 8x8 HV封装; • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.\n\n

STP45N65M5

N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STP45N65M5

N-channel650V,0.067ohmtyp.,35AMDmeshVPowerMOSFET

STP45N65M5

iscN-ChannelMOSFETTransistor

STW45N65M5

N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STW45N65M5

N-channel650V,35A,0.067廓typ.,MDmesh??VPowerMOSFETsinTO-3PF,TO-247andTO-247longleadspackages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STW45N65M5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.078Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW45N65M5

iscN-ChannelMOSFETTransistor

STWA45N65M5

IscN-ChannelMOSFETTransistor