丝印：40DN3LLH5；Package：PowerFLAT5x6；Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 double island

Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Features ■ RDS(on) * Qg industry benchmark ■

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STMICROELECTRONICS

意法半导体

汽车级双路N沟道30 V、0.016 Ohm典型值、11 A STripFET H5功率MOSFET，PowerFLAT 5x6双岛封装

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. • AEC-Q101 qualified \n• Low on-resistance \n• High avalanche ruggedness \n• Low gate drive power loss \n• Wettable flank package;

ST

意法半导体

DFN5X6

STM

信盛精工

上传：深圳市金芯世纪电子有限公司

DFN5X6

ST

上传：深圳诚思涵科技有限公司

DFN5X6

STM

信盛精工

上传：深圳市远进半导体有限公司