丝印：60N3LLH5；Package：PowerFLAT；N-channel 30 V, 0.0063 ?? 17 A PowerFLAT??(5x6) STripFET??V Power MOSFET

Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resista

文件：587.16 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0063 Ohm, 17 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). R\nDS(on) * Q\ng industry benchmark\nVery low switching gate charge\nExtremely low on-resistance R\nDS(on)\nLow gate drive power losses\nHigh avalanche ruggedness;

ST

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：1.8306 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

ST
PowerFLAT-5x5-12

ST

上传：深圳市拓亿芯电子有限公司

ST/意法
DFN5X6

ST/意法

上传：深圳市富芯乐电子科技有限公司