汽车级双路N沟道30 V、5.9 mOhm典型值、20 A STripFET H5功率MOSFET，PowerFLAT 5x6双岛封装

This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. • Designed for automotive applications and AEC-Q101 qualified \n• Logic level VGS(th) \n• 175 °C maximum junction temperature \n• Wettable flanks package;

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意法半导体

丝印：66DN3LLH5；Package：PowerFLAT；Dual N-channel 30 V, 5.9 m廓, 20 A STripFET??V Power MOSFET in PowerFLAT??5x6 double island package

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STMICROELECTRONICS

意法半导体

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PowerFLAT-5x5-12

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DFN5X6

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QFN8

ST

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