NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 页数：14 Pages

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NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：729.7 Kbytes 页数：14 Pages

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NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

文件：159.35 Kbytes 页数：14 Pages

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：729.7 Kbytes 页数：14 Pages

CEL