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NESG2030M04

NONLINEAR MODEL

DESCRIPTION TheNESG2030M04isfabricatedusingNECsstate-of-the-artSiGe,waferprocess.Withatypicaltransitionfrequencyof60GHztheNESG2030M04isusableinapplicationsfrom100MHztoover10GHz.MaximumDCcurrentinputof35mAprovidesadevicewithausablecurrentrangeof250µA

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2030M04

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2030M04

NPN SiGe HIGH FREQUENCY TRANSISTOR

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2030M04-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2030M04-T2

NPN SiGe HIGH FREQUENCY TRANSISTOR

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NESG2030M04-T2

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2030M04-T2-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2030M04-EVNF16

包装:散装 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD FOR NESG2030 1.6GHZ

CEL

California Eastern Labs

NESG2030M04-EVNF19

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD FOR NESG2030 1.9GHZ

CEL

California Eastern Labs

NESG2030M04-EVNF24

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD FOR NESG2030 G5122.4G

CEL

California Eastern Labs

详细参数

  • 型号:

    NESG2030M04

  • 功能描述:

    射频硅锗晶体管 NPN SiGe High Freq

  • RoHS:

  • 制造商:

    Infineon Technologies 发射极 - 基极电压

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
NEC
22+
SOT-343
6000
十年配单,只做原装
询价
-
23+
SOT343
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
22+
SOT343
3000
原装正品,支持实单
询价
NEC
23+
SOT-343
6000
原装正品,支持实单
询价
NEC
22+
SOT-343
25000
只做原装进口现货,专注配单
询价
CEL
24+
原厂原封
5000
原装正品
询价
NEC
24+
SOT343
5000
全现原装公司现货
询价
NEC
23+
SOT-343
8560
受权代理!全新原装现货特价热卖!
询价
NEC
6000
面议
19
DIP/SMD
询价
更多NESG2030M04供应商 更新时间2025-7-14 15:01:00