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NESG2030M04

NONLINEAR MODEL

DESCRIPTION The NESG2030M04 is fabricated using NECs state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA

文件:13.92 Kbytes 页数:1 Pages

NEC

瑞萨

NESG2030M04

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:151.94 Kbytes 页数:9 Pages

NEC

瑞萨

NESG2030M04

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:466.69 Kbytes 页数:10 Pages

CEL

NESG2030M04

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

NESG2030M04-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:466.69 Kbytes 页数:10 Pages

CEL

NESG2030M04-T2

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:466.69 Kbytes 页数:10 Pages

CEL

NESG2030M04-T2

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:151.94 Kbytes 页数:9 Pages

NEC

瑞萨

NESG2030M04-T2-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:466.69 Kbytes 页数:10 Pages

CEL

NESG2030M04-EVNF16

包装:散装 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD FOR NESG2030 1.6GHZ

CEL

CEL

NESG2030M04-EVNF19

包装:盒 类别:开发板,套件,编程器 射频评估和开发套件,开发板 描述:EVAL BOARD FOR NESG2030 1.9GHZ

CEL

CEL

详细参数

  • 型号:

    NESG2030M04

  • 功能描述:

    射频硅锗晶体管 NPN SiGe High Freq

  • RoHS:

  • 制造商:

    Infineon Technologies 发射极 - 基极电压

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NEC
22+
SOT-343
6000
十年配单,只做原装
询价
-
23+
SOT343
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
22+
SOT343
3000
原装正品,支持实单
询价
NEC
23+
SOT-343
6000
原装正品,支持实单
询价
CEL
24+
原厂原封
5000
原装正品
询价
NEC
24+
SOT343
5000
全现原装公司现货
询价
NEC
23+
SOT-343
8560
受权代理!全新原装现货特价热卖!
询价
NEC
6000
面议
19
DIP/SMD
询价
CEL
19+
SOT-343
200000
询价
CEL
20+
SOT-343
36800
原装优势主营型号-可开原型号增税票
询价
更多NESG2030M04供应商 更新时间2025-10-4 14:02:00