NESG2030M04开发板套件编程器的射频评估开发套件开发板规格书PDF中文资料

DESCRIPTION

The NESG2030M04 is fabricated using NECs state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.

NECs new low profile/flat lead style M04 package is ideal for todays portable wireless applications. The NESG2030M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.

FEATURES

• SiGe TECHNOLOGY:

fT = 60 GHz Process

• LOW NOISE FIGURE:

NF = 0.9 dBm at 2 GHz

• HIGH MAXIMUM STABLE GAIN:

MSG = 20 dB at 2 GHz

• NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance