NESG2021M16-T3中文资料瑞萨数据手册PDF规格书

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

FEATURES

• The device is an ideal choice for low noise, high-gain at low current amplifications

NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz

• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz

• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V

• 6-pin lead-less minimold (M16, 1208 PKG)