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NESG2021M05-T1-A中文资料瑞萨数据手册PDF规格书
NESG2021M05-T1-A规格书详情
FEATURES
• This device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
产品属性
- 型号：
NESG2021M05-T1-A
- 功能描述：
射频硅锗晶体管 NPN SiGe High Freq
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOT343 |
18239 |
RENESAS/瑞萨原装特价NESG2021M05-T1-A即刻询购立享优惠#长期有货 |
询价 | ||
NEC |
23+ |
SOT-343 |
50000 |
原装正品 支持实单 |
询价 | ||
CEL |
24+ |
原厂原封 |
4000 |
原装正品 |
询价 | ||
SOT-343 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
NEC |
2450+ |
SOT23-4 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
NEW |
原厂封装 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
NEC |
2223+ |
SOT-343 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
询价 | ||
NEC |
24+ |
SOT343 |
9700 |
绝对原装正品现货假一罚十 |
询价 | ||
RENESAS |
24+ |
6-PINM |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
