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NESG2021M05-A中文资料瑞萨数据手册PDF规格书
NESG2021M05-A规格书详情
FEATURES
• This device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
产品属性
- 型号：
NESG2021M05-A
- 功能描述：
射频硅锗晶体管 NPN SiGe High Freq
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08+ |
SOT343 |
480 |
询价 | |||
CEL |
23+ |
SOT343 |
999999 |
原装正品现货量大可订货 |
询价 | ||
NEC |
22+ |
SOT23 |
3000 |
原装正品,支持实单 |
询价 | ||
NEC |
17+ |
SOT-343 |
6200 |
100%原装正品现货 |
询价 | ||
原厂正品 |
23+ |
SOT343 |
5000 |
原装正品,假一罚十 |
询价 | ||
NEC |
24+ |
M05 |
1634 |
询价 | |||
NEC |
22+ |
SOT343 |
10730 |
原装正品 |
询价 | ||
NEC |
16+ |
SOT-343 |
10000 |
进口原装现货/价格优势! |
询价 | ||
nec |
1923+ |
sot-343 |
35689 |
绝对进口原装现货库存特价销售 |
询价 | ||
CEL |
24+ |
原厂原封 |
4000 |
原装正品 |
询价 |
