NESG2021M05-A资料使用说明书供应代理瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG2021M05-A	文件：159.35 Kbytes Page：14 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T 文件：159.35 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NESG2021M05	文件：159.35 Kbytes Page：14 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T 文件：159.35 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NESG2021M05	文件：729.7 Kbytes Page：14 Pages	NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：729.7 Kbytes 页数：14 Pages	CEL	CEL
NESG250134-AZ	文件：0 bytes Page：0 Pages	RENESAS SOT89	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
NESG250134-T1-AZ	文件：0 bytes Page：0 Pages	RENESAS SOT89	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多NESG2021M05-A供应商更新时间2025-10-4 15:30:00