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NESG2046M33

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

文件:118.31 Kbytes 页数:3 Pages

NEC

瑞萨

NESG2046M33

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

文件:240.54 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG2046M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low

文件:274.09 Kbytes 页数:8 Pages

RENESAS

瑞萨

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

文件:292.56 Kbytes 页数:4 Pages

CEL

NESG2046M33

NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

CEL

NESG2046M33-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

文件:118.31 Kbytes 页数:3 Pages

NEC

瑞萨

NESG2046M33-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

文件:240.54 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG2046M33-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

文件:240.54 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG2046M33-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • High breakdown voltage techno

文件:240.54 Kbytes 页数:10 Pages

RENESAS

瑞萨

NESG2046M33-T3-A

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKA

文件:118.31 Kbytes 页数:3 Pages

NEC

瑞萨

详细参数

  • 型号:

    NESG2046M33

  • 制造商:

    CEL

  • 制造商全称:

    CEL

  • 功能描述:

    NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

供应商型号品牌批号封装库存备注价格
CEL
2022+
3 针 SuperMiniMold(M33)
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
RENESAS/瑞萨
23+
SOT-23
89630
当天发货全新原装现货
询价
CEL
25+
3-SMD 扁平引线
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NEC
17+
SOT343
6200
100%原装正品现货
询价
NEC
24+
SOT-343SOT-323-4
87200
新进库存/原装
询价
NEC
16+
SOT343
10000
进口原装现货/价格优势!
询价
NEC
23+
SOT343
50000
全新原装正品现货,支持订货
询价
NEC
21+
SOT-343
10000
原装现货假一罚十
询价
NEC
SOT343
22+
6000
十年配单,只做原装
询价
NEC
22+
SOT343
3000
原装正品,支持实单
询价
更多NESG2046M33供应商 更新时间2025-10-4 15:01:00