首页 >NESG2046M33>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
NESG2046M33 | NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
NESG2046M33 | NPN SILICON SiGe RF TWIN TRANSISTOR NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINLEAD-LESSMINIMOLD(M16,1208PACKAGE) FEATURES •2differentbuilt-intransistors(NESG2046M33,2SC5800) Q1:HighgainSiGetransistor fT=18GHzTYP.,S21e2=13dBTYP.@VCE=1V,IC=15mA,f=2GHz Q2:Low | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | |
NESG2046M33 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | |
NESG2046M33 | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | CEL California Eastern Labs | CEL | |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | CEL California Eastern Labs | CEL |
详细参数
- 型号:
NESG2046M33
- 制造商:
CEL
- 制造商全称:
CEL
- 功能描述:
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
CEL |
2022+ |
3 针 SuperMiniMold(M33) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-23 |
89630 |
当天发货全新原装现货 |
询价 | ||
CEL |
25+ |
3-SMD 扁平引线 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NEC |
17+ |
SOT343 |
6200 |
100%原装正品现货 |
询价 | ||
NEC |
24+ |
SOT-343SOT-323-4 |
87200 |
新进库存/原装 |
询价 | ||
NEC |
23+ |
SOT343 |
6680 |
全新原装优势 |
询价 | ||
NEC |
16+ |
SOT343 |
10000 |
进口原装现货/价格优势! |
询价 | ||
RENESAS |
19+ |
SOT343 |
87069 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
NEC |
24+ |
SOT343 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
相关规格书
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相关库存
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