NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2031M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC slow profile, flat lead style M05 Package provides high frequency

文件：156.95 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

文件：158.94 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：790.16 Kbytes 页数：13 Pages

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NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

Renesas

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

文件：158.94 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

文件：158.94 Kbytes 页数：14 Pages

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2031M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC slow profile, flat lead style M05 Package provides high frequency

文件：156.95 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

文件：158.94 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：790.16 Kbytes 页数：13 Pages

CEL

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：790.16 Kbytes 页数：13 Pages

CEL