NESG2101M05-T1说明书PDF资料原装现货瑞萨-114ic电子网

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NESG2101M05-T1	文件：172.22 Kbytes Page：14 Pages	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR DESCRIPTION NECsNESG2101M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators NECslowprofile,flatleadstyleM05Packageprovideshighfrequencyp	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG2101M05-T1	文件：172.81 Kbytes Page：15 Pages	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES •Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ⎯PO(1dB)=21dBmTYP.@V	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG2101M05-T1-A	文件：172.81 Kbytes Page：15 Pages	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES •Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ⎯PO(1dB)=21dBmTYP.@V	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG2101M05-T1-A	文件：580.99 Kbytes Page：15 Pages	NPN SiGe HIGH FREQUENCY TRANSISTOR	CEL California Eastern Labs	CEL

更多NESG2101M05-T1供应商更新时间2025-5-3 13:58:00