NESG2101M05-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators

NECslow profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.

FEATURES

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY

VCEO = 5 V (Absolute Maximum)

• HIGH OUTPUT POWER:

P1dB = 21 dBm at 2 GHz

• LOW NOISE FIGURE:

NF = 0.9 dBm at 2 GHz

• HIGH MAXIMUM STABLE POWER GAIN:

MSG = 17 dB at 2 GHz

• LOW PROFILE M05 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance