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NESG2101M05-T1中文资料瑞萨数据手册PDF规格书
NESG2101M05-T1规格书详情
NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification
⎯ PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz
⎯ NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
产品属性
- 型号：
NESG2101M05-T1
- 功能描述：
射频硅锗晶体管 NPN SiGe High Freq
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
20+ |
SOT343 |
224864 |
进口原装现货,假一赔十 |
询价 | ||
NEC/RENESAS瑞萨 |
23+ |
SOT-343 |
89630 |
当天发货全新原装现货 |
询价 | ||
NEC |
25+ |
SOT343 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT343 |
21574 |
郑重承诺只做原装进口现货 |
询价 | ||
RENESAS |
12+ |
SOT343 |
3000 |
询价 | |||
RENESAS |
2023+ |
SOT-343 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NEC |
24+ |
SOT343 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
询价 | ||
NEC |
23+ |
SOT343 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
NEC |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
NEC |
2016+ |
SOT-343 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
