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NESG2031M05-A中文资料瑞萨数据手册PDF规格书
NESG2031M05-A规格书详情
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
产品属性
- 型号：
NESG2031M05-A
- 功能描述：
射频硅锗晶体管 NPN SiGe High Freq
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NEC |
24+ |
SOT343 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
NEC |
22+ |
SOT236 |
3000 |
原装正品,支持实单 |
询价 | ||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
LINEAR |
23+ |
SOT23-6 |
5000 |
原装正品,假一罚十 |
询价 | ||
NEC |
24+ |
SOT-343SOT-323-4 |
12200 |
新进库存/原装 |
询价 | ||
RENESAS |
24+ |
SOT343 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
RENESAS/瑞萨 |
24+ |
SOT-343 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NEC |
19+ |
SOT343 |
20000 |
400 |
询价 | ||
CEL |
24+ |
原厂原封 |
2500 |
只做原装正品 |
询价 |
