NESG2031M05-A资料datasheet下载市场行情-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NESG2031M05-A	文件：158.94 Kbytes Page：14 Pages	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG2031M05	文件：158.94 Kbytes Page：14 Pages	NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG2031M05	文件：790.16 Kbytes Page：13 Pages	NPNSiGeHIGHFREQUENCYTRANSISTOR	CEL California Eastern Labs	CEL
NESG2031M05	文件：156.95 Kbytes Page：12 Pages	NECsNPNSiGeHIGHFREQUENCYTRANSISTOR DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

更多NESG2031M05-A供应商更新时间2025-5-4 14:26:00