NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p

文件：172.22 Kbytes 页数：14 Pages

NEC

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NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

文件：172.81 Kbytes 页数：15 Pages

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瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：580.99 Kbytes 页数：15 Pages

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NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

Renesas

瑞萨

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

文件：172.81 Kbytes 页数：15 Pages

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p

文件：172.22 Kbytes 页数：14 Pages

NEC

瑞萨

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

文件：172.81 Kbytes 页数：15 Pages

RENESAS

瑞萨

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

文件：172.81 Kbytes 页数：15 Pages

RENESAS

瑞萨

NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：580.99 Kbytes 页数：15 Pages

CEL

Package：SOT-343F；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 17GHZ M05

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