NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

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Package：SOT-343F；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 17GHZ M05

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NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification ⎯ PO (1 dB) = 21 dBm TYP. @ V

文件：172.81 Kbytes 页数：15 Pages

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NPN SiGe HIGH FREQUENCY TRANSISTOR

文件：580.99 Kbytes 页数：15 Pages

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NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslow profile, flat lead style M05 Package provides high frequency p

文件：172.22 Kbytes 页数：14 Pages

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