NESG2101M16-A规格书供应代理瑞萨RENESAS-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG2101M16-A	文件：352.04 Kbytes Page：15 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：352.04 Kbytes 页数：15 Pages	RENESAS 瑞萨	RENESAS
NESG2101M16-A	文件：135.74 Kbytes Page：13 Pages	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：135.74 Kbytes 页数：13 Pages	NEC 瑞萨	NEC
NESG2101M16	文件：352.04 Kbytes Page：15 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 文件：352.04 Kbytes 页数：15 Pages	RENESAS 瑞萨	RENESAS
NESG2101M16	文件：135.74 Kbytes Page：13 Pages	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：135.74 Kbytes 页数：13 Pages	NEC 瑞萨	NEC
NESG2101M16	文件：227.53 Kbytes Page：3 Pages	NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：227.53 Kbytes 页数：3 Pages	CEL	CEL

更多NESG2101M16-A供应商更新时间2025-11-22 14:26:00