首页 >NESG2021M16>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NESG2021M16 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., 文件：120.23 Kbytes 页数：12 Pages | NEC 瑞萨 | NEC | |
NESG2021M16 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga 文件：337.32 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | |
NESG2021M16 | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes 页数：11 Pages | CEL | CEL | |
NESG2021M16 | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：224.18 Kbytes 页数：3 Pages | CALMIRCO | CALMIRCO | |
NESG2021M16 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CMD | CMD | |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., 文件：120.23 Kbytes 页数：12 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga 文件：337.32 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga 文件：337.32 Kbytes 页数：14 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., 文件：120.23 Kbytes 页数：12 Pages | NEC 瑞萨 | NEC | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., 文件：120.23 Kbytes 页数：12 Pages | NEC 瑞萨 | NEC |
详细参数
- 型号：
NESG2021M16
- 功能描述：
射频硅锗晶体管 RO 551-NESG2021M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
6-PINM |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NEC |
23+ |
6-PINM |
50000 |
原装正品 支持实单 |
询价 | ||
CEL |
24+ |
原厂原封 |
4000 |
原装正品 |
询价 | ||
RENESAS |
12+ |
6-PINM |
5427 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
2023+ |
6-PINM |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS |
24+ |
6-PINM |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
RENESAS |
23+ |
6-PINM |
5427 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
20+ |
6-PINM |
5427 |
进口原装现货,假一赔十 |
询价 | ||
RENESAS |
25+ |
6-PINM |
8800 |
公司只做原装,详情请咨询 |
询价 |
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