NESG2046M33-T3-A数据表ic资料行情报价瑞萨-114ic电子网

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
NESG2046M33-T3-A	文件：118.31 Kbytes Page：3 Pages	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •HIGHBREAKDOWNVOLTAGETECHNOLOGY FORSIGETRANSISTORS: VCEO(absolutemaximumratings)=5.0V •3-PINSUPERLEAD-LESSMINIMOLD(M33)PACKA	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
NESG2046M33-T3-A	文件：240.54 Kbytes Page：10 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
NESG2046M33-T3-A	文件：292.56 Kbytes Page：4 Pages	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION	CEL California Eastern Labs	CEL
NESG2046M33-T3	文件：240.54 Kbytes Page：10 Pages	NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.5dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechno	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多NESG2046M33-T3-A供应商更新时间2025-5-3 8:01:00