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BFG540

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFG540

NPN9GHzWidebandTransistor

■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BFG540

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540S

N-Channel100-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF540S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技

IRF540S

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77mΩ GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.t

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

IRF540S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

IRF540SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

IRF540SPBF

HEXFET짰PowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF540SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF540STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

IRF540STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF540STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技

IRF540STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF540Z

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF540Z

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.0265Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableopera

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540Z

AUTOMOTIVEMOSFET

VDSS=100V RDS(on)=26.5mΩ ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF540ZL

AUTOMOTIVEMOSFET

VDSS=100V RDS(on)=26.5mΩ ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF540ZL

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF540ZL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRF540P

  • 功能描述:

    MOSFET N-Chan 100V 28 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
23+
TO-220
3500
全新原装,公司现货销售
询价
VISHAY
23+
TO-220
9240
保证进口原装现货假一赔十
询价
Vishay(威世)
23+
标准封装
8148
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
Vishay Siliconix
24+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
询价
IR
13+
TO-220
15000
全新原装的现货
询价
VISHAY
15+
原厂原装
11050
进口原装现货假一赔十
询价
VISHAY
2020+
TO-220
400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
VISHAY
23+
TO-220AB
65400
询价
IR
23+
TO-220
2000
全新原装深圳仓库现货有单必成
询价
VISHAY
2021+
TO-220AB
9450
原装现货。
询价
更多IRF540P供应商 更新时间2024-5-30 14:12:00