Power MOSFET

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VISHAYVishay Siliconix

威世威世科技公司

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

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IRF

Advanced Process Technology

文件：308.2 Kbytes 页数：13 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.0265Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

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ISC

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