丝印：FDs；Package：SOT23；PNP Silicon Darlington Transistors

文件：528.69 Kbytes 页数：7 Pages

INFINEON

英飞凌

丝印：FDS2672；N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Features Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) RoHS compliant General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s

文件：455.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4141；Package：SO-8；P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ

Features Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A High performance trench technology for extremely low rDS(on) RoHS Compliant General Description This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTre

文件：621.65 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435；30V P-Channel PowerTrenchÒ MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：168.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FDS4465；P-Channel 1.8V Specified PowerTrench® MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Applications • Power management • Load swi

文件：375.34 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS5351；Package：SO-8；N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

Features Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanc

文件：339.51 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS5680；60V N-Channel PowerTrench™ MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery p

文件：235.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS6570；Package：SOP-8；30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

文件：393.9 Kbytes 页数：6 Pages

UMW

友台半导体