PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE - BCV26 - BCV27 BCV46 - BCV47

文件：49.51 Kbytes 页数：1 Pages

Zetex

PNP Darlington Transistor

PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.

文件：36.39 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Darlington Transistor

Description This device is designed for applications requiring extremely high current gain at collector currents to 800 mA. Sourced from Process 61.

文件：111.16 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

文件：43.89 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Silicon Darlington Transistors

PNP Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV27, BCV47 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.55 Kbytes 页数：5 Pages

Infineon

英飞凌

PNP Darlington transistors

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required.

文件：122.64 Kbytes 页数：7 Pages

恩XP

PNP Darlington Transistors

PNP Darlington Transistors for preamplifier input applications

文件：130.229 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNP Silicon Darlington Transistors ● For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 27, BCV 47 (NPN)

文件：141.95 Kbytes 页数：4 Pages

SIEMENS

西门子

丝印：FD；Package：SOT23；PNP Darlington transistors

FEATURES •High current (max. 500 mA) •Low voltage (max. 60 V) •Very high DC current gain (min. 10000). APPLICATIONS •Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47.

文件：318.76 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES * Low saturation voltage COMPLEMENTARY TYPE – BCV26 - BCV27 BCV46 - BCV47 PARTMARKING DETAILS – BCV26 - ZFD BCV46 - ZFE

文件：51.22 Kbytes 页数：1 Pages

DIODES

美台半导体