FDB0690N1507L芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
FDB0690N1507L	文件：388.96 Kbytes Page：6 Pages	丝印：FDB0690N1507L；Package：D2-PAK-7L；N-Channel PowerTrench® MOSFET Features Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using ON 文件：388.96 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
FDB0690N1507L	文件：388.96 Kbytes Page：6 Pages	丝印：FDB0690N1507L；Package：D2-PAK-7L；N-Channel PowerTrench® MOSFET Features Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant General Description This N-Channel MOSFET is produced using ON 文件：388.96 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI

更多FDB0690N1507L供应商更新时间2025-9-21 16:12:00