FDB0690N1507L中文资料安森美半导体数据手册PDF规格书

特性 Features

„ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A

„ Fast Switching Speed

„ Low Gate Charge

„ High Performance Trench Technology for Extremely Low

RDS(on)

„ High Power and Current Handling Capability

„ RoHS Compliant

General Description

This N-Channel MOSFET is produced using ON

Semiconductor’s advance PowerTrench® process that has

been especially tailored to minimize the on-state resistance

while maintaining superior ruggedness and switching

performance for industrial applications.

Applications

„ Industrial Motor Drive

„ Industrial Power Supply

„ Industrial Automation

„ Battery Operated tools

„ Battery Protection

„ Solar Inverters

„ UPS and Energy Inverters

„ Energy Storage

„ Load Switch