丝印：FDA28N50F；Package：TO-3PN；N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ

Features • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ. 80 nC) • Low Crss (Typ. 38 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM

文件：1.53105 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：FDA28N50F；Package：TO-3PN；N-Channel UniFETTM FRFET® MOSFET 500 V, 28 A, 175 mΩ

Features • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 14 A • Low Gate Charge (Typ. 80 nC) • Low Crss (Typ. 38 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM

文件：1.53105 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET 500V, 28A, 0.175廓

Description These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

文件：541.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 28A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：346.69 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 28A, 0.175廓

文件：399.13 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体