N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：141.37 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：152.02 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 20A, RDS(ON) = 40mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 70mW @VGS = 2.5V. Lead free product is acquired.

文件：1.27844 Mbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 22A, RDS(ON) = 80mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 7V. RoHS compliant.

文件：623.33 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -9A, RDS(ON) = 200mΩ @VGS = -10V. RDS(ON) = 320mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：140.9 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 25A, RDS(ON) = 23mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 33mW @VGS = 2.5V. RoHS compliant.

文件：535.65 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 25A, RDS(ON) = 70mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = 5V. Lead free product is acquired.

文件：641.71 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：415.62 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -87A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.1mW @VGS = -4.5V. RoHS compliant.

文件：535.45 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 8A, RDS(ON) = 150mΩ @VGS = 10V. RDS(ON) = 180mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package.

文件：591.69 Kbytes 页数：5 Pages

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