N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 16A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：351.46 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A , RDS(ON) = 66mW @VGS = 10V. Super high dense cell design for extremely low RDS( High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 85mW @VGS = 4.5V. Lead free product is acquired.

文件：451.96 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：415.57 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.7A, RDS(ON) = 66mW @VGS = 10V. RDS(ON) = 85mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

文件：600.94 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 17A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：407.84 Kbytes 页数：4 Pages

CET

华瑞