CED6426中文资料下载原装现货華瑞CET-MOS-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CED6426	文件：351.46 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED6426	文件：451.96 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
AD6426	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AD6426XB	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AD6426XST	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AN6426NK	文件：127.84 Kbytes Page：9 Pages	Hands-freeSpeechNetworkIC ■Features •Incorporatesallthefunctionsrequiredofahands-free telephone. •Incorporatesallthefunctionsrequiredofahandset. •ComplieswithACandDCimpedancerequirements. •Providesawidedynamicrange. •Anoisedetectingcircuitpreventsinadvertenttransmission. •Operati	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AON6426	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AON6426L	文件：139.05 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AON6426L	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
CEA6426	文件：620.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEA6426	文件：1.77573 Mbytes Page：8 Pages	N-Channel0-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CEA6426	文件：417.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM6426	文件：415.57 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEM6426	文件：600.94 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CET6426	文件：409.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：351.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：451.96 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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详细参数

型号：
CED6426
制造商：
CET
制造商全称：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	CED6426	CET/華瑞	24+	TO-251	156530	明嘉莱只做原装正品现货	询价
鑫勃源（上海北京青岛）有限公司	CED6426	CET	23+	DIP-14	18000		询价
齐创科技(上海,北京,青岛)有限公司	CED6426	CET	23+	TO-251	5000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	CED6426	CET	2020+	TO-251	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市百视威讯电子科技有限公司	CED6426		23+	N/A	45780	正品授权货源可靠	询价
深圳兆威电子有限公司	CED6426	VB	2019	TO-251	55000	绝对原装正品假一罚十!	询价
深圳市新力诚科技有限公司	CED6426	进口原厂	2020+	TO-251	20000	公司代理品牌,原装现货超低价清仓!	询价
深圳市鼎欣微电子有限公司	CED6426	CET/華瑞	21+	TO-251	30000	只做正品原装现货	询价
艾睿国际（香港）有限公司	CED6426	CET(华瑞)	2112+	TO-251(I-PAK)	105000	80个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市保之丰科技有限公司	CED6426	VBsemi	21+	TO-251	15500		询价

更多CED6426供应商更新时间2024-5-1 18:06:00

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