N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：141.37 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：413.26 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 9.3A, RDS(ON) = 18mW @VGS = 4.5V. RDS(ON) = 24mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：461.72 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 42A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 25mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：141.37 Kbytes 页数：4 Pages

CET

华瑞