CED6355

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-26A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU6355

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-26A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CPH6355

General-PurposeSwitchingDeviceApplications

Features •ON-resistanceRDS(on)1=130mΩ(typ.) •4Vdrive •Halogenfreecompliance

CPH6355

SingleP-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=130mΩ(typ.) •4Vdrive •Halogenfreecompliance

CPH6355-TL-H

General-PurposeSwitchingDeviceApplications

CPH6355-TL-H

SingleP-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=130mΩ(typ.) •4Vdrive •Halogenfreecompliance

CPH6355-TL-W

SingleP-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=130mΩ(typ.) •4Vdrive •Halogenfreecompliance

EPE6355G

LowPassFilterforCableModemApplications

GM6355

300mALOWNOISECMOSLDOWITHENABLEFUNCTION

Description TheGM6355seriesisalow-dropoutlinearregulator.Itisdesignedspecificallyforbatteryoperatedsystemswiththegroundcurrentaslowas50μAtypical.Thisfeaturesignificantlyextendsthebatterylife.LowpowerconsumptionandhighaccuracyisachievedthroughCMOSandprogra

HL6355MG

LowOperatingCurrentVisibleLaserDiode