P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -26A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：288.06 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -26A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：288.06 Kbytes 页数：4 Pages

CET

华瑞

General-Purpose Switching Device Applications

Features • ON-resistance RDS(on)1=130mΩ(typ.) • 4V drive • Halogen free compliance

文件：407.25 Kbytes 页数：4 Pages

SANYO

三洋

Single P-Channel Power MOSFET

Features • ON-resistance RDS(on)1=130mΩ(typ.) • 4V drive • Halogen free compliance

文件：403.53 Kbytes 页数：5 Pages

ONSEMI

安森美半导体