CED703AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ​​​​​​​●TO-220&TO-263package.

CEU703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM703ALPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CL703

HERMETICALLYSEALEDTO-5CASE

[CLAIREX]

CL703A

HERMETICALLYSEALEDTO-5CASE

[CLAIREX]

CL703L

HERMETICALLYSEALEDTO-5CASE

[CLAIREX]

CSQG703BP

magneticbuzzer

CSQG703BP

MAGNETICBUZZERTRANSDUCER

FEATURES •throughhole •85dB •externallydriven

CSQG703BP

MAGNETICBUZZERTRANSDUCER

FEATURES •throughhole •85dB •externallydriven