N-Channel Enhancement Mode Field Effect Transistor

FEATURES 400V, 5A, RDS(ON) = 1W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating.

文件：613.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：414.34 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free prod

文件：419.95 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating .

文件：658.46 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free prod

文件：419.95 Kbytes 页数：4 Pages

CET

华瑞