N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package. ■ Lead free product is acquired.

文件：505.8 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 15A, RDS(ON) = 0.15 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：571.12 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：374.51 Kbytes 页数：4 Pages

CET

华瑞